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Tag: 6H-SiC

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  • 300mm (12-Inch) 4H-N / 6H-N SiC Single Crystal Silicon Carbide Wafer for Power & LED Devices Read more
    SiC Substrates

    300mm (12-Inch) 4H-N / 6H-N SiC Single Crystal Silicon Carbide Wafer for Power & LED Devices

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  • 4H-N Type & Semi-Insulating Silicon Carbide (SiC) Substrates, 2–8 Inch Wafers for Power Devices, RF & Epitaxy Applications Read more
    SiC Substrates

    4H-N Type & Semi-Insulating Silicon Carbide (SiC) Substrates, 2–8 Inch Wafers for Power Devices, RF & Epitaxy Applications

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  • Silicon Carbide (SiC) Rectangle Substrate, Custom Sizes, 4H/6H Polytype, Epi-Ready, N/P Doped for Advanced Power & RF Electronics Read more
    SiC Substrates

    Silicon Carbide (SiC) Rectangle Substrate, Custom Sizes, 4H/6H Polytype, Epi-Ready, N/P Doped for Advanced Power & RF Electronics

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