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Tag: high-temperature SiC
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SiC Substrates
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SiC Substrates
6H-N Type Silicon Carbide (SiC) Wafer, 2-Inch Substrate, 350µm / 650µm Thickness, CMP Epi-Ready for RF & Power Electronics
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SiC Substrates
Silicon Carbide (SiC) Rectangle Substrate, Custom Sizes, 4H/6H Polytype, Epi-Ready, N/P Doped for Advanced Power & RF Electronics
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