300mm (12-Inch) 4H-N / 6H-N SiC Single Crystal Silicon Carbide Wafer for Power & LED Devices

Product Overview:
ZMSH provides high-quality 300mm (12-inch) single crystal silicon carbide (SiC) wafers, grown using the Physical Vapor Transport (PVT) method. Silicon carbide is a wide-bandgap semiconductor with excellent electrical and thermal properties, including high thermal conductivity, high breakdown voltage, high electron mobility, and high saturated drift velocity.

These 300mm SiC wafers are ideal for next-generation power electronics, high-voltage MOSFETs, Schottky diodes, IGBTs, and GaN-based optoelectronic devices. Optimized for low basal plane dislocation (BPD) density, our wafers ensure superior device performance, high reliability, and stable operation in high-power, high-temperature, and high-frequency applications.

Key Specifications:

Applications:

1. Power Electronics:

   • SiC MOSFETs, PiN diodes, Schottky diodes (SBD), JBS diodes, IGBTs, and SiC BJTs

   • High-voltage rectifiers (3kV–12kV) and high-efficiency power modules

   • Enables smaller, lighter, and more efficient power electronic systems than silicon-based devices

2. Optoelectronic Devices:

   • GaN-based LEDs and laser diodes

   • Excellent lattice matching and thermal compatibility with GaN epitaxial layers

   • Higher thermal conductivity and vertical conduction capability than sapphire, improving heat dissipation and device lifespan

3. Research & Advanced Devices:

   • High-frequency and high-temperature electronics

   • Material for studies on BPD reduction, dislocation control, and next-generation SiC devices

Advantages:

• Low BPD Density: Optimized PVT growth and cooling processes reduce basal plane dislocation density, improving device reliability

• High Thermal & Electrical Performance: Efficient heat spreading and stable high-voltage operation

• Large 300mm Wafer Size: Supports next-generation power modules and LED substrates

• High-Quality Surface & Polishing: Single-side or double-side polished with ultra-low surface roughness (Ra ≤ 5Å)

• Cleanroom Packaging: Individually packed in 100-grade cleanroom environment to prevent contamination

ZMSH Commitment:
ZMSH is dedicated to delivering high-performance 300mm SiC wafers with controlled dislocation density and high reproducibility. We support fully customizable specifications to meet your industrial or research requirements.

FAQ

Q1: What is the typical basal plane dislocation (BPD) density of ZMSH 300mm SiC wafers?
A1: Our 300mm 4H-SiC and 6H-SiC wafers are grown using optimized PVT processes with precise cooling control, seed bonding, and crucible selection. The basal plane dislocation density can be reduced below 1000 cm⁻², ensuring high reliability for high-power and high-voltage devices.

Q2: Can the thickness, orientation, or resistivity of the wafers be customized?
A2: Yes. ZMSH supports fully customizable specifications for 300mm wafers, including thickness (0.35–1.0 mm), off-axis orientation (<0001> 4° or other angles), and resistivity (N-type 0.015–0.028 Ω·cm or semi-insulating >1×10⁵ Ω·cm). This allows wafers to meet the precise requirements of power devices, LEDs, or research applications.

Q3: How do 300mm SiC wafers benefit GaN-based LED and laser diode applications?
A3: SiC substrates offer excellent lattice matching and thermal compatibility with GaN epitaxial layers. Compared to sapphire, SiC provides higher thermal conductivity, vertical conduction capability, and improved heat dissipation. This results in higher light extraction efficiency, better thermal management, and longer device lifespan for high-power LEDs and laser diodes.