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Tag: CMP polished SiC
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SiC Substrates
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SiC Substrates
4H-N Type & Semi-Insulating Silicon Carbide (SiC) Substrates, 2–8 Inch Wafers for Power Devices, RF & Epitaxy Applications
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SiC Substrates
6H-N Type Silicon Carbide (SiC) Wafer, 2-Inch Substrate, 350µm / 650µm Thickness, CMP Epi-Ready for RF & Power Electronics
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