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Tag: Silicon Carbide wafer

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  • 4-inch 4H-N Silicon Carbide (SiC) Wafer, 350µm, P/R/D Grade for MOSFETs, SBD & JBS Applications Read more
    SiC Substrates

    4-inch 4H-N Silicon Carbide (SiC) Wafer, 350µm, P/R/D Grade for MOSFETs, SBD & JBS Applications

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  • 4H-N Type & Semi-Insulating Silicon Carbide (SiC) Substrates, 2–8 Inch Wafers for Power Devices, RF & Epitaxy Applications Read more
    SiC Substrates

    4H-N Type & Semi-Insulating Silicon Carbide (SiC) Substrates, 2–8 Inch Wafers for Power Devices, RF & Epitaxy Applications

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  • 6H Silicon Carbide Substrate (2–12 Inch) | High-Temperature and UV-Resistant SiC Wafer for Industrial and RF Applications Read more
    SiC Substrates

    6H Silicon Carbide Substrate (2–12 Inch) | High-Temperature and UV-Resistant SiC Wafer for Industrial and RF Applications

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